Diffused resistive memory cell with buried active zone

ABSTRACT

An apparatus for non-volatile memory, and more specifically a ReRAM device with a buried resistive memory cell. The memory cell includes a first contact disposed on a substrate, an active layer, a second contact, a first diffused zone disposed within the active layer, a second diffused zone disposed within the active layer, and an active switching zone disposed within the active layer in between the first diffused zone and the second diffused zone. In one embodiment, the active zone may be doped by diffusion or ion implantation and/or may be fabricated utilizing a self-aligned process. In another embodiment, the memory cell may combine a deep implant and shallow diffusion well to create the active zone. The vertically and laterally isolated buried resistive memory cell concentrates the electric field away from the edges of the device and eliminates the effects of interface impurities and contaminants.

BACKGROUND OF THE DISCLOSURE Field of the Disclosure

Embodiments of the present disclosure generally relate to non-volatilememory, and more specifically to the fabrication of memory elements.

Description of the Related Art

Non-volatile memory is memory that does not require a continuous powersupply to retain information. Non-volatile memory may be used forsecondary storage or long-term persistent storage. The constantlyincreasing speed of electronic devices and storage demand drive newrequirements for non-volatile memory. Resistive RAM (ReRAM) is one ofthe leading candidates for high density non-volatile memory.

Resistive memory devices, e.g. resistive switching non-volatile randomaccess memory (ReRAM), are formed using memory elements that have two ormore stable states with different resistances. Bi-stable memory has twostable states. A bi-stable memory element can be placed in a highresistance state or a low resistance state by application of suitablevoltages or currents. Voltage or current pulses are typically used toswitch the memory element from one resistance state to the other. Somekinds of resistive RAM are initially insulating, but a sufficientvoltage (known as a forming voltage) applied to the resistive switchingmaterial will form one or more conductive pathways in the resistiveswitching material to prepare a memory device for use.

However, production of ReRAM devices in large quantities is difficultbecause the behavior of individual cells scatters widely as it is notdefined by the material and the geometry, but by random effects. Forexample impurities or contaminants form as devices are milled intoindividual units. These contaminants occur in some devices near theedges, where electric fields are the strongest, and/or near thelithographically defined interfaces causing undesired switching. Assuch, there exists a large variability of electrical properties ofindividual cells in the fabrication of large arrays.

Thus, there is a need for an improved resistive switching non-volatilerandom access memory device.

SUMMARY OF THE DISCLOSURE

The present disclosure generally relates to an apparatus fornon-volatile memory, and more specifically a ReRAM device with a buriedresistive memory cell. The memory cell includes a first contact disposedon a substrate, an active layer, a second contact, a first diffused zonedisposed within the active layer, a second diffused zone disposed withinthe active layer, and an active switching zone disposed within theactive layer in between the first diffused zone and the second diffusedzone. In one embodiment, the active zone may be doped by diffusion orion implantation and/or may be fabricated utilizing a self-alignedprocess. In another embodiment, the memory cell may combine a deepimplant and shallow diffusion well to create the active zone. Thevertically and laterally isolated buried resistive memory cellconcentrates the electric field away from the edges of the device andeliminates the effects of interface impurities and contaminants. Also,by doping the properties of the material are modified such that areaspredominantly affected by impurities do not show resistive switching andinstead remain inactive.

In one embodiment, a ReRAM device may include a first contact, a secondcontact, and an active layer disposed in between the first contact andthe second contact. The active layer may include an additional diffusedzone adjacent the first contact. The diffused zone has a firstcomposition. The active layer may also include an active zone disposedin between the diffused zone and the second contact. The active zone hasa second composition different from the first composition of thediffused zone.

In another embodiment, a ReRAM device may include a first contact, asecond contact, and an active layer disposed in between the firstcontact and the second contact. The active layer may include a firstdiffused zone adjacent the first contact. The first diffused zone has afirst composition. The active layer may also include a second diffusedzone adjacent the second contact. The second diffused zone has a secondcomposition. The active layer may also include an active zone disposedin between the first diffused zone and the second diffused zone. Theactive zone has a third composition different from the first compositionof the diffused zone.

In another embodiment, a ReRAM device may include a first contact, asecond contact, and an active layer. The first contact and the secondcontact may be disposed on the active layer. The active layer mayinclude a first diffused zone adjacent the first contact. The firstdiffused zone has a first composition. The active layer may also includea second diffused zone adjacent the second contact. The second diffusedzone has a second composition. The active layer may also include anactive zone disposed in between the first diffused zone and the seconddiffused zone. The active zone has a third composition different fromthe first composition of the first diffused zone. The active layer mayalso include a non-active zone disposed on top of the active zone.

In another embodiment, a ReRAM device may include a first contact, asecond contact, and an active layer. The first contact and the secondcontact may be disposed on the active layer. The active layer mayinclude a first diffused zone implanted within the active layer andadjacent the first contact. The first diffused zone has a firstcomposition. The active layer may also include a second diffused zoneimplanted within the active layer and adjacent the second contact. Thesecond diffused zone has a second composition. The active layer may alsoinclude an active zone disposed in between the first diffused zone andthe second diffused zone. The active zone has a third composition thatis different from the first composition of the first diffused zone.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments.

FIG. 1 shows a schematic illustration of a ReRAM memory device accordingto one embodiment.

FIG. 2 shows a schematic illustration of a ReRAM memory device accordingto another embodiment.

FIG. 3 shows a schematic illustration of a ReRAM memory device accordingto another embodiment.

FIG. 4 shows a schematic cross-section of a lateral ReRAM memory deviceaccording to one embodiment.

FIG. 5 shows a schematic cross-section of a lateral ReRAM memory deviceaccording to another embodiment.

FIG. 6 shows a schematic cross-section of a buried ReRAM memory deviceaccording to one embodiment.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements disclosed in oneembodiment may be beneficially utilized on other embodiments withoutspecific recitation.

DETAILED DESCRIPTION

In the following, reference is made to embodiments of the disclosure.However, it should be understood that the disclosure is not limited tospecific described embodiments. Instead, any combination of thefollowing features and elements, whether related to differentembodiments or not, is contemplated to implement and practice thedisclosure. Furthermore, although embodiments of the disclosure mayachieve advantages over other possible solutions and/or over the priorart, whether or not a particular advantage is achieved by a givenembodiment is not limiting of the disclosure. Thus, the followingaspects, features, embodiments and advantages are merely illustrativeand are not considered elements or limitations of the appended claimsexcept where explicitly recited in a claim(s). Likewise, reference to“the disclosure” shall not be construed as a generalization of anyinventive subject matter disclosed herein and shall not be considered tobe an element or limitation of the appended claims except whereexplicitly recited in a claim(s).

The present disclosure relates to an apparatus for non-volatile memory,and more specifically a resistive random access memory (ReRAM) devicewith a buried resistive memory cell. The memory cell includes a firstcontact disposed on a substrate, an active layer, a second contact, afirst diffused zone disposed within the active layer, a second diffusedzone disposed within the active layer, and an active switching zonedisposed within the active layer in between the first diffused zone andthe second diffused zone. In one embodiment, the active zone may bedoped by diffusion or ion implantation and/or may be fabricatedutilizing a self-aligned process. In another embodiment, the memory cellmay combine a deep implant and shallow diffusion well to create theactive zone. The vertically and laterally isolated buried resistivememory cell concentrates the electric field away from the edges of thedevice and eliminates the effects of interface impurities andcontaminants. Also, by doping, the properties of the material aremodified such that areas predominantly affected by impurities do notshow resistive switching and instead remain inactive.

FIG. 1 shows a schematic illustration of a ReRAM memory device 100according to one embodiment. The ReRAM memory device 100 may include asubstrate 102, a first contact 108, a second contact 104, and an activelayer 106. The substrate 102 may be a silicon substrate including one ormore layers. The substrate 102 is not intended to be limited to a singlelayer or a silicon substrate. Rather, the substrate 102 represents oneor more layers that may be present in CMOS fabrication. The active layer106 may be disposed in between the first contact 108 and the secondcontact 104.

The first contact 108 may include a metal selected from a groupconsisting of aluminum (Al), tantalum (Ta), indium (In), hafnium (Hf),platinum (Pt), gold (Au), silver (Ag), tungsten (W), magnesium (Mg),zirconium (Zr), europium (Eu), lanthanum (La), titanium nitride (TiN),or their alloys. The second contact 104 may be disposed on the substrate102. The second contact may include a metal selected from a groupconsisting of aluminum (Al), tantalum (Ta), indium (In), hafnium (Hf),platinum (Pt), gold (Au), silver (Ag), tungsten (W), magnesium (Mg),zirconium (Zr), europium (Eu), lanthanum (La), titanium nitride (TiN),tin (Sn), copper (Cu), germanium (Ge), or their alloys.

The active layer 106 may be disposed on the second contact 104. Theactive layer may have an oxygen or dopant concentration that variesbetween the first contact 108 and the second contact 104. The activelayer 106 may be binary or complex metal oxide material selected fromthe group consisting of tantalum oxide, hafnium oxide, titanium oxide,zirconium dioxide, aluminum oxide, titanium dioxide, or zinc oxide. Theactive layer may also be selected from the group of complex oxides, suchas manganates, cuprates or nickelates. The active layer 106 may includea diffused zone 112 adjacent to the first contact 108 and an active zone114 disposed in between the diffused zone 112 and the second contact104. The diffused zone 112 may have a different composition than theactive zone 112. It should be understood that the active zone 114 is thememory element capable of switching from a low resistive state to a highresistive state or vice versa.

The diffused zone 112 may comprise a metal or alloy containing elementsselected from the group consisting of aluminum, tantalum, indium, tin,silver, copper, germanium, or hafnium. In one embodiment, the diffusedzone 112 is diffused from the first contact 108. In one embodiment, thediffusion of the diffused zone 112 may be completed after the individualdevices are milled from the entire wafer. In another embodiment, a hardmask patterning or ion deposition may be used to deposit the diffusedzone 112 in the active layer 106 prior to the deposition of the firstcontact 108. In one embodiment, the combination of the diffused zone 112and the oxygen gradient in the active layer 106 creates the active zone114. The milling process creates contaminants—shown as a lightningbolt—near the edges, where electric fields are the strongest, and/ornear the lithographically defined interfaces, shown as “x” and “o” inFIG. 1. As such, the diffused zone 112 advantageously moves the activezone 114 away from a first interface 108 formed by the first contact 108and the active layer 106. The concentration gradient in the active layer106 advantageously moves the active zone 114 away from a secondinterface 118 formed by the second contact 104 and the active layer 106.

In one embodiment, the ReRAM device 100 is exposed to oxygen to performa sidewall oxidation exposing active material near a first surface 120and a second surface 122. The exposure to oxygen transforms a portion124 of the active layer 106 into a highly insulating portion andadvantageously provides for the active zone 114 to be disposed in themiddle of active layer 106. In other words, the active layer 106 isdisposed away from contaminates created near the first surface 120 andsecond surface 122. Having the active zone 114 located substantiallycentrally in the active layer 106 advantageously and specificallydefines the switching element eliminating electrical field edge effectsand provides for consistency in the manufacturing of individual devices.

FIG. 2 shows a schematic illustration of a ReRAM memory device 200 witha self-aligned doping material 226. It should be understood that theReRAM memory device 200 is substantially similar to the ReRAM memorydevice 100. The ReRAM memory device 200 may include a first contact 208,an active layer 206, a second contact 204, and a substrate 202. Thesubstrate 202 may be substantially similar to the substrate 102. Thefirst contact 208 may be substantially similar to the first contact 108.The second contact 204 may be substantially similar to the secondcontact 104.

The doping material 226 may be placed in between the active layer 206and the first contact 208. The active layer 206 may be substantiallysimilar to the active layer 106 and may include a diffused zone 212, andactive zone 214. The diffused zone 212 may be diffused from the dopingmaterial 226. As such, the diffused zone 212 may be created below thedoping material 226. The doping material 226 may be selected from thegroup consisting of aluminum, tantalum, indium, tin, silver, copper,germanium, hafnium, or may be an alloy containing one or more of theseelements. After the diffusion, the doping material 226 serves as part ofthe first contact 208. In one embodiment, the ReRAM device 200 isexposed to oxygen to perform a sidewall oxidation destroying the exposedmetal near a first surface 220 and a second surface 222 and limiting thelateral extension of the ReRAM device 200 as described above for FIG. 1.

FIG. 3 shows a schematic illustration of a ReRAM memory device 300according to another embodiment. It should be understood that the ReRAMmemory device 300 is substantially similar to the ReRAM memory device100. The ReRAM memory device 300 may include a first contact 308, anactive layer 306, a second contact 304, and a substrate 302. Thesubstrate 302 may be substantially similar to the substrate 102. Thefirst contact 308 may be substantially similar to the first contact 108.The second contact 304 may be substantially similar to the secondcontact 104.

The active layer 306 may have an oxygen or doping concentration thatchanges between the first contact 308 and the second contact 304. Theactive layer 306 may include a binary oxide or a mixture of suchselected from the group consisting of tantalum oxide, hafnium oxide,titanium oxide, zirconium dioxide, aluminum oxide, titanium dioxide, orzinc oxide. The active layer 306 may also be selected from the group ofcomplex oxides, such as manganates, cuprates or nickelates. The activelayer 306 may include a first diffused zone 312 adjacent to the firstcontact 308, a second diffused zone 310 adjacent to the second contact304, and an active zone 314 disposed in between the first diffused zone312 and the second diffused zone 310. The active zone 314 may have adifferent composition than the first diffused zone 312. In anotherembodiment, the active zone 314 has a different composition than thesecond diffused zone 310. The first diffused zone 312 and the seconddiffused zone 310 may include the same metal or may include differentmetals. In one embodiment, the first diffused zone 312 has a differentcomposition than the second diffused zone 310. It should be understoodthat the active zone 314 is the memory element capable of switching froma low resistive state to a high resistive state or vice versa.

The first diffused zone 312 may be substantially similar to the diffusedzone 112. The second diffused zone 310 may comprise a metal or metalalloy selected from the group consisting of aluminum, tantalum, indium,tin, silver, copper, germanium, or hafnium. In one embodiment, thesecond diffused zone 310 is diffused from the second contact 304. In oneembodiment, the diffusion of the second diffused zone 310 may becompleted after the individual devices are milled from the entire wafer.In another embodiment, a hard mask patterning or ion deposition may beused to deposit the second diffused zone 310 in the active layer 306prior to the deposition of the first contact 308. In one embodiment, thecombination of the first diffused zone 312 and the second diffused zone310 in the active layer 106 creates the active zone 314.

The milling process creates contaminants—shown as a lightning bolt—nearthe edges, where electric fields are the strongest, and/or near thelithographically defined interfaces, shown as “x” and “o” in FIG. 1. Assuch, the first diffused zone 312 advantageously moves the active zone314 away from a first interface 316 formed by the first contact 308 andthe active layer 306. The second diffused zone 310 in the active layer306 advantageously moves the active zone 314 away from a secondinterface 318 formed by the second contact 304 and the active layer 306.In one embodiment, the ReRAM device 300 is exposed to oxygen to performa sidewall oxidation inactivating the active material near a firstsurface 320 and a second surface 322 as described above for FIG. 1.

FIG. 4 shows a schematic cross-section of a lateral ReRAM memory device400 according to one embodiment. FIG. 4 shows two individual units. TheReRAM memory device 400 may be formed advantageously without having tofirst mill individual units. The ReRAM memory device 400 may include afirst contact 408, a second contact 404, an active layer 406, and asubstrate 402. The substrate 402 may be substantially similar to thesubstrate 102.

The first contact 408 and the second contact 404 may be disposed on theactive layer 406. The first contact 408 may be disposed laterallyadjacent to the second contact 404. The first contact 408 and the secondcontact 404 may include a metal selected from the group consisting ofaluminum (Al), tantalum (Ta), indium (In), hafnium (Hf), platinum (Pt),gold (Au), silver (Ag), tungsten (W), magnesium (Mg), zirconium (Zr),europium (Eu), lanthanum (La), titanium nitride (TiN), tin (Sn), copper(Cu), germanium (Ge), or their alloys.

The active layer 406 may include a first diffused zone 412, a seconddiffused zone 410, an active zone 414, and a non-active zone 428. Theactive layer 406 may include a binary or complex metal oxide materialselected from a group consisting of tantalum oxide, hafnium oxide,titanium oxide, zirconium dioxide, aluminum oxide, titanium dioxide,zinc oxide, manganates, cuprates, or nickelates. In one embodiment, theactive layer 406 has an oxygen or doping gradient between the top andbottom surface. In other words, there may be a different concentrationof oxygen or dopants near the area of the active layer 406 adjacent tothe first contact 408 than the area of the active layer 406 adjacent thesubstrate 402.

The first diffused zone 412 and the second diffused zone 410 maycomprise a metal or metal alloy selected from the group consisting ofaluminum, tantalum, indium, tin, silver, copper, germanium, or hafnium.In one embodiment, the first diffused zone 412 and the second diffusedzone 410 include the same metal. In another embodiment, the firstdiffused zone 412 and the second diffused zone 410 comprise a differentmetal. In one embodiment, the first diffused zone 412 and the seconddiffused zone 410 are diffused into the active layer 406. The firstdiffused zone 412 may be laterally disposed from the second diffusedzone 410. The first diffused zone 412 may be adjacent to and in contactwith the first contact 408. The second diffused zone 410 may be adjacentto and in contact with the second contact 404. In another embodiment,the first diffused zone 412 and the second diffused zone 410 are formedusing ion implantation. In one embodiment, the active zone 414 isdisposed in between the first diffused zone 412 and the second diffusedzone 410. The non-active zone 428 may be disposed on top of the activezone 414 in between the first contact 408 and the second contact 404.

A light doping may be performed in between the first diffused zone 412and the second diffused zone 410 to define the active zone 414. Theactive zone 414 may comprise a metal or metal alloy selected from thegroup consisting of aluminum, tantalum, indium, tin, silver, copper,germanium, or hafnium. In one embodiment, the composition of the activezone 414 is different from the composition of the first diffused zone412. In one embodiment, the concentration of metal in the first diffusedzone 412 is higher than in the active zone 414. It should be understoodthat the active zone 414 is the memory element capable of switching froma low resistive state to a high resistive state or vice versa. Thenon-active zone 428 may be disposed on top of the active zone 414. Thenon-active zone 428 may be made inactive by oxidation, ion implantation,or doping. The non-active zone 428 may have a greater oxygen content ascompared to the active zone 414.

FIG. 5 shows a schematic cross-section of a lateral ReRAM memory device500 according to another embodiment. FIG. 5 shows two individual units.The ReRAM memory device 500 may be formed advantageously without havingto first mill individual units. The ReRAM memory device 500 may includea first contact 508, a second contact 504, an active layer 506, and asubstrate 502. The substrate 502 may be substantially similar to thesubstrate 102.

The first contact 508 and the second contact 504 may be disposed on thesubstrate 502. The first contact 508 and the second contact 504 may bedisposed between the substrate 502 and the active layer 506. The firstcontact 508 may be disposed laterally adjacent to the second contact504. The first contact 508 and the second contact 504 may includesimilar material to first contact 408 and second contact 404.

The active layer 506 may include a first diffused zone 512, a seconddiffused zone 510, an active zone 514, an area 520, and a non-activezone 528. The area 520 may be disposed opposite to the non-active zone528. The active layer 506 may include a material similar to the activelayer 406. In one embodiment, the active layer 506 has an oxygen ordopant gradient between the top and bottom surface. In other words,there may be a different concentration of oxygen or dopants near thearea of the active layer 506 adjacent to the first contact 508 than thatof the area 520 of the active layer 506.

The first diffused zone 512 and the second diffused zone 510 maycomprise a material similar to the first diffused zone 412 and thesecond diffused zone 410. In one embodiment, the first diffused zone 512and the second diffused zone 510 include the same metal. In anotherembodiment, the first diffused zone 512 and the second diffused zone 510comprise a different metal. In one embodiment, the first diffused zone512 and the second diffused zone 510 are diffused into the active layer506. The first diffused zone 512 may be laterally disposed from thesecond diffused zone 510. The first diffused zone 512 may be adjacent toand in contact with the first contact 508. The second diffused zone 510may be adjacent to and in contact with the second contact 504. Inanother embodiment, the first diffused zone 512 and the second diffusedzone 510 are formed using ion implantation. In one embodiment, theactive zone 514 is disposed in between the first diffused zone 512 andthe second diffused zone 510 within the active layer 506. The non-activezone 528 may be disposed adjacent to the active zone 514 in between thefirst contact 508 and the second contact 504.

A light doping may be performed in between the first diffused zone 512and the second diffused zone 510 to define the active zone 514. Theactive zone 514 may comprise a metal or metal alloy selected from thegroup consisting of aluminum, tantalum, indium, tin, silver, copper,germanium, or hafnium. In one embodiment, the composition of the activezone 514 is different from the composition of the first diffused zone512. In one embodiment, the concentration of metal in the first diffusedzone 512 is higher than in the active zone 514. It should be understoodthat the active zone 514 is the memory element capable of switching froma low resistive state to a high resistive state or vice versa. Thenon-active zone 528 may be disposed adjacent to the active zone 514. Thenon-active zone 528 may be made inactive by oxidation, ion implantation,or doping. The non-active zone 528 may have a greater oxygen content ascompared to the active zone 514.

The lateral ReRAM memory device 400, 500 may advantageously be formedthrough a self-aligned process limiting the number of lithography steps.The fewer steps involved thus reduces the cost of manufacturing.Additionally, the ReRAM memory device 400, 500 include a buriedswitching zone such that the active layer is not exposed duringprocessing and such that any defects present will not affect thecentrally located active switching zone. Furthermore, the ReRAM memorydevice 400, 500 may advantageously be formed as a back end of lineprocess.

FIG. 6 shows a schematic cross-section of a buried ReRAM memory device600 according to one embodiment. The buried ReRAM memory device 600 mayinclude a first contact 608, a second contact 604, an active layer 606,and a substrate 602. The substrate 602 may be substantially similar tothe substrate 102. In one embodiment, the active layer 606 is disposedon the substrate 602.

The first contact 608 and the second contact 604 may be disposed on theactive layer 606. The first contact 608 may be disposed laterallyadjacent to the second contact 604. The first contact 608 may bedisposed adjacent to and in contact with the first diffused zone 612.The second contact 604 may be disposed adjacent to and in contact withthe second diffused zone 610. The first contact 608 and the secondcontact 604 may include a metal selected from the group consisting ofaluminum (Al), tantalum (Ta), indium (In), hafnium (Hf), platinum (Pt),gold (Au), silver (Ag), tungsten (W), magnesium (Mg), zirconium (Zr),europium (Eu), lanthanum (La), titanium nitride (TiN), or their alloys.

The active layer 606 may include a first diffused zone 612, a seconddiffused zone 610, and an active zone 614 disposed in between the firstdiffused zone 612 and the second diffused zone 610. The composition ofthe active zone 614 of the area 618 near or adjacent to the surface 620may be modified to have a composition different from that of the activeswitching zone 616. The area 618 of the active zone 614 near or adjacentto the surface 620 may be made inactive by oxidation, ion implantation,or doping. The non-active area 618 may be adjacent the upper surface ofthe second diffused zone 610 and adjacent the second contact 604. In oneembodiment, the non-active area 618 may have a greater oxygen content ascompared to the active zone 614.

The second diffused zone 610 may be implanted within the active layer606 and adjacent to the second contact 604. The active layer 606 may bea binary or complex metal oxide material selected from a groupconsisting of tantalum oxide, hafnium oxide, titanium oxide, zirconiumdioxide, aluminum oxide, titanium dioxide, zinc oxide, manganates,cuprates, or nickelates. In one embodiment, the active layer 606 has anoxygen or dopant concentration gradient. The oxygen or dopantconcentration may change between the first contact 608 and the substrate602. In other words, the active layer 606 adjacent to the first contact608 may have a different oxidation state than the active layer 606adjacent the substrate 602.

In one embodiment, the active layer 606 may also include an isolationtrench 630. The isolation trench 630 may be disposed lateral to thesecond diffused zone 610. In one embodiment, the isolation trench 630may be disposed in the active layer 606. The active layer 606 may alsoinclude a buried isolation layer 632 to isolate the active zone 614 fromunderlying material. The buried isolation layer 632 may be disposedbelow the second diffused zone 610 and orthogonal to the isolationtrench 630. In one embodiment, the buried ReRAM memory device 600 mayhave both the isolation trench 630 and the buried isolation trench 632.In another embodiment, the buried ReRAM memory device 600 has either theisolation trench 630 or the buried isolation trench 632.

The first diffused zone 612 and the second diffused zone 612 togetherisolate the active zone 614. The first diffused zone 612 may be disposedwithin the active layer by deep implantation. The first diffused zone612 may comprise a metal or metal alloy selected from the groupconsisting of aluminum, tantalum, indium, silver, tin, copper,germanium, or hafnium. The active zone 614 has a composition that isdifferent from the first diffused zone 612. The active zone 614 has acomposition that is different from the second diffused zone 610. Theactive zone 614 may comprise a metal or metal alloy selected from thegroup consisting of aluminum, tantalum, indium, tin, silver, copper,germanium, or hafnium. The active zone 614 has a higher dopantconcentration than either the first diffused zone 612 or the seconddiffused zone 610. It should be understood that the active zone 614 isthe memory element capable of switching from a low resistive state to ahigh resistive state or vice versa. The first diffused zone 612 maycomprise a shallow diffusion of dopant. The second diffused zone 610 maycomprise a metal or metal alloy selected from the group consisting ofaluminum, tantalum, indium, tin, silver, copper, germanium, or hafnium.

The combination of the deep implant and shallow diffusion well bury theactive zone away from impurities and contaminants located near thesurface. Thus, the buried active zone advantageously possesses stablelong-term performance.

The various embodiments of the ReRAM memory device each advantageouslyvertically and laterally isolate or bury the active switching memoryelement. By doing so, the resistive memory cell concentrates theelectric field away from the edges of the device and eliminates theeffects of interface impurities and contaminants.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

1. A ReRAM device, comprising: a first contact; a second contact; and an active layer disposed between the first contact and the second contact, wherein the active layer comprises: a diffused zone adjacent the first contact, wherein the diffused zone has a first composition; and an active zone disposed between the diffused zone and the second contact, wherein the active zone has a second composition different from the first composition of the diffused zone.
 2. The device of claim 1, wherein the active zone comprises a binary or complex metal oxide material selected from the group consisting of tantalum oxide, hafnium oxide, titanium oxide, zirconium dioxide, aluminum oxide, titanium dioxide, zinc oxide, manganates, cuprates, or nickelates.
 3. The device of claim 2, wherein the diffused zone comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, indium, tin, silver, copper, germanium, or hafnium.
 4. The device of claim 1, wherein the diffused zone comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, indium, tin, silver, copper, germanium or hafnium.
 5. The device of claim 1, wherein the active layer that has a gradient that changes from the first contact to the second contact.
 6. The device of claim 5, wherein the gradient is an oxygen gradient.
 7. The device of claim 5, wherein the gradient is created by a dopant selected from the group consisting of indium or silicon.
 8. A ReRAM device, comprising: a first contact; a second contact; and an active layer disposed between the first contact and the second contact, wherein the active layer comprises: a first diffused zone adjacent the first contact, wherein the first diffused zone has a first composition; a second diffused zone adjacent the second contact, wherein the second diffused zone has a second composition; and an active zone disposed between the first diffused zone and the second diffused zone, wherein the active zone has a third composition different from the first composition of the first diffused zone.
 9. The device of claim 8, wherein the active zone comprises a binary or complex metal oxide material selected from the group consisting of tantalum oxide, hafnium oxide, titanium oxide, zirconium dioxide, aluminum oxide, titanium dioxide, zinc oxide, manganates, cuprates, or nickelates.
 10. The device of claim 8, wherein the first diffused zone comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, indium, tin, silver, copper, germanium, or hafnium.
 11. The device of claim 8, wherein the second diffused zone comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, indium, tin, silver, copper, germanium, or hafnium.
 12. The device of claim 8, further comprising a substrate, wherein the second contact is disposed on the substrate.
 13. The device of claim 8, wherein the first contact comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, indium, tin, silver, copper, germanium, or hafnium.
 14. The device of claim 8, wherein the third composition of the active zone is different from the second composition of the second diffused zone.
 15. The device of claim 8, wherein the active layer that has a gradient that changes from the first contact to the second contact.
 16. A ReRAM device, comprising: a first contact; a second contact; and an active layer, wherein the first contact and the second contact are disposed on the active layer, and wherein the active layer comprises: a first diffused zone adjacent the first contact, wherein the first diffused zone has a first composition; a second diffused zone adjacent the second contact, wherein the second diffused zone has a second composition; an active zone disposed between the first diffused zone and the second diffused zone, wherein the active zone has a third composition different from the first composition of the first diffused zone; and a non-active zone disposed on top of the active zone.
 17. The device of claim 16, wherein the active layer comprises a binary or complex metal oxide material selected from a group consisting of tantalum oxide, hafnium oxide, titanium oxide, zirconium dioxide, aluminum oxide, titanium dioxide, zinc oxide, manganates, cuprates, or nickelates.
 18. The device of claim 16, wherein the active zone comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, hafnium, tin, silver, copper, germanium, or indium.
 19. The device of claim 16, wherein the non-active zone comprises a greater oxygen content compared to the active switching zone.
 20. The device of claim 16, wherein the first diffused zone comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, hafnium, tin, silver, copper, germanium, or indium.
 21. The device of claim 16, wherein the second diffused zone comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, hafnium, tin, silver, copper, germanium, or indium.
 22. The device of claim 16, wherein the active layer that has an oxygen gradient.
 23. The device of claim 16, wherein the first contact is disposed laterally adjacent to the second contact.
 24. The device of claim 23, wherein the non-active zone is disposed on the active zone in between the first contact and the second contact.
 25. A ReRAM device, comprising: a first contact; a second contact; and an active layer, wherein the first contact and the second contact are disposed on the active layer, and wherein the active layer comprises: a first diffused zone implanted within the active layer and adjacent the first contact, wherein the first diffused zone has a first composition; a second diffused zone implanted within the first diffused zone and adjacent the second contact, wherein the second diffused zone has a second composition; and an active zone disposed between the first diffused zone and the second diffused zone, wherein the active zone has a third composition different from the first composition of the first diffused zone.
 26. The device of claim 25, wherein the first diffused zone has an upper surface adjacent an upper surface of the active layer.
 27. The device of claim 25, wherein the second diffused zone has an upper surface adjacent the upper surface of the first diffused zone.
 28. A ReRAM device, comprising: a first contact; a second contact; and an active layer, wherein the active layer is disposed on the first contact and the second contact, and wherein the active layer comprises: a first diffused zone adjacent the first contact, wherein the first diffused zone has a first composition; a second diffused zone adjacent the second contact, wherein the second diffused zone has a second composition; an active zone disposed between the first diffused zone and the second diffused zone, wherein the active zone has a third composition different from the first composition of the first diffused zone; and a non-active zone disposed on top of the active zone.
 29. The device of claim 28, wherein the active layer comprises a binary or complex metal oxide material selected from a group consisting of tantalum oxide, hafnium oxide, titanium oxide, zirconium dioxide, aluminum oxide, titanium dioxide, zinc oxide, or manganates, cuprates, or nickelates.
 30. The device of claim 28, wherein the non-active zone comprises a greater oxygen content compared to the active switching zone device similar to claim 14 where the electrodes are under the active material, not on top. 